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| 7MBR15SC120 PIM/Built-in converter with thyristor and brake (S series) 1200V / 15A / PIM Features * Low VCE(sat) * Compact Package * P.C. Board Mount Module * Converter Diode Bridge Dynamic Brake Circuit IGBT Modules Applications * Inverter for Motor Drive * AC and DC Servo Drive Amplifier * Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Collector-Emitter voltage Gate-Emitter voltage Inverter Symbol VCES VGES IC ICP -IC PC VCES VGES IC ICP Collector power disspation Repetitive peak reverse voltage(Diode) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge 0n-state current (Non-Repetitive) Junction temperature Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) PC VRRM VDRM VRRM IT(AV) ITSM Tjw VRRM IO IFSM I2t Tj Tstg Viso Condition Continuous 1ms Collector current Tc=25C Tc=80C Tc=25C Tc=80C Collector power disspation Collector-Emitter voltage Gate-Emitter voltage Collector current Brake 1 device Continuous 1ms 1 device Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=125C, 10ms half sine wave 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave Junction temperature (except Thyristor) Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque AC : 1 minute Rating 1200 20 25 15 50 30 15 110 1200 20 25 15 50 30 110 1200 1600 1600 15 200 125 1600 15 155 120 +150 -40 to +125 AC 2500 AC 2500 1.7 *1 Unit V V A A A W V V A A W V V V A A C V A A A 2s C C V V N*m *1 Recommendable value : 1.3 to 1.7 N*m (M4) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 26 should be connected together and shorted to copper base. Converter Thyristor IGBT Module Electrical characteristics (Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Inverter 7MBR15SC120 Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM IDM IRRM IGT VGT VTM VFM IRRM R B Condition VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=15mA VGE=15V, Ic=15A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=15A VGE=15V RG=82 IF=15A chip terminal IF=15A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=15A, VGE=15V chip terminal VCC=600V IC=15A VGE=15V RG=82 VR=1200V VDM=1600V VRM=1600V VD=6V, IT=1A VD=6V, IT=1A ITM=15A chip terminal IF=15A chip terminal VR=1600V T=25C T=100C T=25/50C Characteristics Typ. Max. 75 200 5.5 7.2 8.5 2.1 2.15 2.6 1800 0.35 0.25 0.45 0.08 2.3 2.35 1.2 0.6 1.0 0.3 3.2 350 75 200 2.6 1.2 0.6 1.0 0.3 75 1.0 1.0 100 2.5 1.05 Unit A nA V V pF s Min. Input capacitance Turn-on time Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage V ns A nA V s Turn-on time Turn-off time Reverse current off-state current Reverse current Gate trigger current Gate trigger voltage On-state voltage Forward on voltage 2.1 2.2 0.35 0.25 0.45 0.08 Brake Thyristor Converter 0.95 1.0 1.1 1.2 5000 495 3375 A mA mA mA V V V Thermistor Reverse current Resistance B value 1.5 75 520 3450 A K 465 3305 Thermal resistance Characteristics Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Thyristor Converter Diode With thermal compound Characteristics Typ. Max. 1.14 1.85 1.14 1.00 1.30 0.05 Unit Thermal resistance ( 1 device ) Rth(j-c) C/W Contact thermal resistance * Rth(c-f) * This is the value which is defined mounting on the additional cooling fin with thermal compound IGBT Module Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 7MBR15SC120 [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) 35 15V VGE= 20V 30 12V 35 VGE= 20V 15V 12V 30 25 25 Collector current : Ic [ A ] 20 10V 15 Collector current : Ic [ A ] 20 10V 15 10 10 5 8V 5 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 35 Tj= 25C 30 10 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) Tj= 125C 8 25 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 6 20 15 4 Ic= 30A 2 Ic= 15A Ic= 7.5A 10 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 1000 [ Inverter ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 1000 600 15 500 400 10 Coes 100 Cres 200 5 50 0 5 10 15 20 25 30 35 0 0 50 100 0 150 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module 7MBR15SC120 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=82, Tj= 25C 1000 1000 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 82, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton tr ton tr tf 100 100 tf 50 0 5 10 15 20 25 50 0 5 10 15 20 25 Collector current : Ic [ A ] Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=15V, Tj= 25C 5000 5 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=82 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 4 Eon(125C) 1000 3 Eon(25C) 500 toff 2 Eoff(125C) Eoff(25C) 1 Err(125C) Err(25C) 0 ton tr 100 tf 50 30 100 1000 0 5 10 15 20 25 30 Gate resistance : Rg [ ] Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=15A, VGE=15V, Tj= 125C 12 200 [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<=15V, Rg>=82, Tj<=125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10 Eon 150 8 6 Collector current : Ic [ A ] 100 SCSOA (non-repetitive pulse) 4 Eoff 2 50 Err 0 30 100 1000 0 0 200 RBSOA (Repetitive pulse) 400 600 800 1000 1200 1400 Gate resistance : Rg [ ] Collector - Emitter voltage : VCE [ V ] IGBT Module 7MBR15SC120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 35 300 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=82 Tj=125C 30 Tj=25C trr(125C) 25 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] 100 trr(25C) Forward current : IF [ A ] 20 15 10 5 10 Irr(125C) Irr(25C) 0 0 1 2 3 4 5 0 5 10 15 20 25 Forward on voltage : VF [ V ] Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 35 100 [ Thyristor ] On-state current vs. On-state voltage (typ.) Tj= 25C 30 Tj= 125C Instantaneous on-state current [ A ] 25 Tjw= 125C Tjw= 25C Forward current : IF [ A ] 20 15 10 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2 0.0 0.4 0.8 1.2 1.6 2.0 Forward on voltage : VFM [ V ] Instantaneous on-state voltage [ V ] Transient thermal resistance 10 200 100 [ Thermistor ] Temperature characteristic (typ.) Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] Conv. Diode 1 IGBT[Inverter&Brake] Thyristor Resistance : R [ k ] 1 10 1 0.1 0.05 0.001 0.01 0.1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Pulse width : Pw [ sec ] Temperature [ C ] IGBT Module 7MBR15SC120 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 25C(typ.) 35 35 [ Brake ] Collector current vs. Collector-Emitter voltage Tj= 125C(typ.) VGE= 20V 15V 12V 30 30 VGE= 20V 15V 12V 25 25 Collector current : Ic [ A ] Collector current : Ic [ A ] 20 10V 15 20 10V 15 10 10 5 8V 0 0 1 2 3 4 5 5 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 35 Tj= 25C 30 Tj= 125C 8 10 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C(typ.) 25 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 6 20 15 4 Ic= 30A 2 Ic= 15A Ic= 7.5A 10 5 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 5000 1000 [ Brake ] Dynamic Gate charge (typ.) Vcc=600V, Ic=15A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 1000 600 15 500 400 10 Coes 100 Cres 200 5 50 0 5 10 15 20 25 30 35 0 0 50 100 0 150 Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ] Gate - Emitter voltage : VGE [ V ] IGBT Module Outline Drawings, mm 7MBR15SC120 Marking : White Marking : White Equivalent Circuit Schematic [ Converter ] 21 (P) [ Thyristor ] 26 [ Brake ] 22(P1) [ Inverter ] [ Thermistor ] 8 25 20 (Gu) 18 (Gv ) 16 (Gw) 9 1(R) 2(S) 3(T) 19(Eu) 7(B) 17(Ev ) 4(U) 15(Ew) 5(V) 6(W) 14(Gb) 23(N) 24(N1) 13(Gx) 12(Gy ) 11(Gz) 10(En) |
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